Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes
- 1 March 1997
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (3) , 266-271
- https://doi.org/10.1007/s11664-997-0162-0
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Inductively coupled plasma etching of GaNApplied Physics Letters, 1996
- Dry etch damage in InN, InGaN, and InAlNApplied Physics Letters, 1995
- High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmasApplied Physics Letters, 1995
- Chemically assisted ion beam etching of gallium nitrideJournal of Electronic Materials, 1995
- Characteristics of chemically assisted ion beam etching of gallium nitrideApplied Physics Letters, 1994
- Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)Applied Physics Letters, 1993
- Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxyJournal of Vacuum Science & Technology A, 1993
- Effects of ion species and adsorbed gas on dry etching induced damage in GaAsJournal of Vacuum Science & Technology B, 1985
- Effects of dry etching on GaAsJournal of Vacuum Science & Technology B, 1983
- Sputter Etching Effects on GaAs Schottky JunctionsJournal of the Electrochemical Society, 1982