Hydrogen diffusion and relaxation processes in a-Si:H and a-Ge:H

This publication has 14 references indexed in Scilit:

• Nature of long-range atomic H motion ina-Si:H
  Physical Review Letters, 1989
• Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
  Physical Review B, 1989
• On the generation and annealing of dangling bond defects in hydrogenated amorphous silicon
  Applied Physics A, 1988
• Hydrogen diffusion in amorphous silicon
  Philosophical Magazine Part B, 1987
• Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
  Physical Review Letters, 1987
• Defect dynamics and the Staebler-Wronski effect in hydrogenated amorphous silicon
  Physical Review B, 1987
• Mechanisms for peculiar low-temperature phenomena in hydrogenated amorphous silicon
  Physical Review Letters, 1987
• Defects in Amorphous Silicon: A New Perspective
  Physical Review Letters, 1986
• Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
  Physical Review B, 1985
• A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon
  Applied Physics Letters, 1978