On the generation and annealing of dangling bond defects in hydrogenated amorphous silicon
- 1 January 1988
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 45 (1) , 41-51
- https://doi.org/10.1007/bf00618762
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Thermal-equilibrium processes in amorphous siliconPhysical Review B, 1987
- Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cellsApplied Physics A, 1986
- Doping efficiencies of gas-phase and ion-implantation doped a-Si:HApplied Physics A, 1986
- Thermal equilibration in doped amorphous siliconPhysical Review B, 1986
- A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous siliconApplied Physics A, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- The diffusion of hydrogen in amorphous siliconJournal of Non-Crystalline Solids, 1983
- Determination of the hydrogen diffusion coefficient in hydrogenated amorphous silicon from hydrogen effusion experimentsJournal of Applied Physics, 1982
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Atomic Diffusion in SemiconductorsPublished by Springer Nature ,1973