Current suppression induced by conduction-band discontinuity in Al0.35Ga0.65As-GaAs N-p heterojunction diodes
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (4) , 2261-2263
- https://doi.org/10.1063/1.327853
Abstract
Curent suppression in Al0.35Ga0.65As‐GaAs N‐p heterojunctions is observed experimentally. The data are explained by examining the carrier transport modified by electron accumulation in the interface potential notch resulting from the conduction‐band discontinuity. In addition, it is found that the temperature dependent I‐V measurements can be used to deduce the magnitude of ΔEC at the junction interface.This publication has 10 references indexed in Scilit:
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