A diamond driver-active load pair fabricated by ion implantation
- 16 August 1993
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 2 (10) , 1341-1343
- https://doi.org/10.1016/0925-9635(93)90181-z
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Hall mobility and carrier concentration versus temperature for type IIa natural insulating diamond doped with boron by ion implantationJournal of Applied Physics, 1992
- An ion-implanted diamond metal-insulator-semiconductor field-effect transistorIEEE Electron Device Letters, 1991
- Depth distributions and range parameters for elements implanted into single-crystal diamonds and chemically vapor-deposited polycrystal diamond filmsSurface and Coatings Technology, 1991
- A thermally activated solid state reaction process for fabricating ohmic contacts to semiconducting diamondJournal of Applied Physics, 1990