Homogeneity of carbon microdistribution in edge-defined film-fed grown polycrystalline silicon
- 15 March 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 18 (2) , 122-128
- https://doi.org/10.1016/0921-5107(93)90123-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Interaction of ambient gas and meniscus surface during growth of edge-defined film-fed growth polycrystalline silicon samplesJournal of Applied Physics, 1991
- Ambient gas-induced SiC-like structures in edge-defined film-fed grown polycrystalline silicon samplesJournal of Materials Science, 1991
- SiC-like structures in edge-defined film-fed growth poly-silicon ribbonsJournal of Materials Science Letters, 1990
- Influence of high-temperature thermal treatment on edge-defined film-fed growth siliconJournal of Applied Physics, 1989
- Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbonJournal of Applied Physics, 1988
- Long nonagons — An approach to high productivity silicon sheet using the EFG methodJournal of Crystal Growth, 1987
- Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substratesJournal of Applied Physics, 1986
- Carbon distribution in silicon ribbons grown by FFG and castInfrared Physics, 1986
- Modeling of Ambient‐Meniscus Melt Interactions Associated with Carbon and Oxygen Transport in EFG of Silicon RibbonJournal of the Electrochemical Society, 1982
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959