Influence of high-temperature thermal treatment on edge-defined film-fed growth silicon

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Abstract
Various polycrystalline silicon ribbons, grown with the edge-defined film-fed growth (EFG) technique, are annealed at the temperatures from 450 to 1250 °C. The EFG ribbon growth technique introduces high C and O concentration which results in specific annealing behavior due to defect interactions. It is shown that oxygen in-diffusion during the crystal growth produces an oxygen-rich layer close to the surface of the ribbon, containing mostly SiOx agglomerates unstable at higher temperatures. Carbon concentration that exceeds the oxygen concentration causes a formation of high-temperature [C,O] complexes which could not be found in Si material with an inverted carbon-to-oxygen concentration ratio.