Melt-interface mechanism for generation of silicon carbide microdefects in silicon
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3) , 487-492
- https://doi.org/10.1016/0022-0248(86)90481-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- The mechanism of formation of microdefects in siliconJournal of Crystal Growth, 1984
- Influence of high-temperature annealing on performance of edge-defined film-fed growth silicon ribbon solar cellsApplied Physics Letters, 1984
- Point defect aggregates in boron doped dislocation-free Czochralski silicon crystalsJournal of Crystal Growth, 1983
- Carbon in silicon: Properties and impact on devicesSolid-State Electronics, 1982
- Microdefects in silicon and their relation to point defectsJournal of Crystal Growth, 1981
- The effect of doping on the formation of swirl defects in dislocation-free czochralski-grown silicon crystalsJournal of Crystal Growth, 1980
- Ostwald ripening and its application to precipitates and colloids in ionic crystals and glassesJournal of Materials Science, 1978
- Concentration and Behavior of Carbon in Semiconductor SiliconJournal of the Electrochemical Society, 1970