Fabrication of CoSi2 Gate Si Permeable Base Transistor Using Si-MBE
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A permeable base transistor (PBT) with submicron grating is fabricated using a Si/COSi2/Si double heterostructure. The high-quality Si/COSi2/Si double heterostructure is formed by two-step moleculer beam epitaxy (i.e. low-temperature MBE and successive high-temperature MBE). The Si and COSi2 interfaces observed by a cross-sectional transmission electron microscope are smooth and atomically abrupt. A new method of patterning COSi2 films is developed. This method uses the difference in surface energies between different crystal orientations. The mutual conductance and cutoff frequency of the PBT are 50 mS/mm and 6 GHz, respectively. These agree with the results of computer simulations. In addition, computer simulations indicate a potential of Si PBT for high frequency application, and a cutoff frequency as high as 90 GHz can be obtained by optimizing the device structure.Keywords
This publication has 7 references indexed in Scilit:
- An observation of 650 °C deformation of Si surface under ultra high vacuumJournal of Applied Physics, 1990
- Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistorJournal of Crystal Growth, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- SPE-CoSi2submicrometer lines by lift-off using selective reaction and its application to a permeable-base transistorIEEE Transactions on Electron Devices, 1986
- Transistor effect in monolithic Si/CoSi 2 /Si epitaxial structuresElectronics Letters, 1984
- Theoretical study of the atomic structure of silicon (211), (311), and (331) surfacesPhysical Review B, 1984
- Fabrication and numerical simulation of the permeable base transistorIEEE Transactions on Electron Devices, 1980