The electronic structure of a back-gated high electron mobility transistor

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Abstract
The authors present variational calculations of the total energy of electrons in a two-dimensional electron gas (2DEG) in a high electron mobility structure, within which a back-gate allows the electric fields on either side of the 2DEG to be controlled independently. In particular, they examine the phase diagram of 2D electron subband occupation as a function of the back-gate bias and the total 2D carrier density. They extend their results to incorporate an applied magnetic field. They relate the results to existing data and suggest novel experiments.