Non-equilibrium effects on metal-oxide-semiconductor tunnel currents
- 31 October 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (10) , 957-973
- https://doi.org/10.1016/0038-1101(71)90165-1
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- The exact low-frequency capacitance-voltage characteristics of metal-oxide-semiconductor (MOS) and semiconductor-insulator-semiconductor (SIS) structuresIEEE Transactions on Electron Devices, 1971
- Tunneling in MIS structures—II: Experimental results on MSiO2SiSolid-State Electronics, 1967
- Tunneling in MIS structures—I: TheorySolid-State Electronics, 1967
- Tunneling in metal-oxide-silicon structuresSolid-State Electronics, 1967
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- Tunneling from Metal to SemiconductorsPhysical Review B, 1965
- Feldemission aus SiliziumZeitschrift für Physik B Condensed Matter, 1963
- Space-Charge-Limited Tunnel Emission into an Insulating FilmJournal of Applied Physics, 1962
- Tunneling from an Independent-Particle Point of ViewPhysical Review B, 1961
- Tunnelling from a Many-Particle Point of ViewPhysical Review Letters, 1961