Si(100)2 × 1: the clean and ammonia exposed surface studied with high resolution core-level spectroscopy
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 271 (3) , 349-354
- https://doi.org/10.1016/0039-6028(92)90899-h
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)Physical Review Letters, 1991
- Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2×1Physical Review Letters, 1991
- A photoemission study of H2O adsorption on a vicinal Si(100) surfaceVacuum, 1988
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- A scanning tunneling microscopy study of the reaction of Si(001)-(2×1) with NH3Journal of Vacuum Science & Technology A, 1988
- ESDIAD of first-row protic hydrides adsorbed on silicon(100): structure and reactivityLangmuir, 1988
- Imaging chemical-bond formation with the scanning tunneling microscope:dissociation on Si(001)Physical Review Letters, 1987
- The reaction of Si(100) 2×1 with NO and NH3: The role of surface dangling bondsJournal of Vacuum Science & Technology B, 1987
- Photoemission study of ammonia dissociation on Si(100) below 700 KPhysical Review B, 1987
- Reaction of Si(100) with N: Rate-Limiting Steps and Reactivity Enhancement via Electronic ExcitationPhysical Review Letters, 1986