Continuous growth of heavily doped p+-n+ Si epitaxial layer using low-temperature photoepitaxy
- 28 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (9) , 879-881
- https://doi.org/10.1063/1.101628
Abstract
Heavily doped p+ and n+ silicon epitaxial layers were continuously grown at 600 °C using photoenhanced epitaxy. The heavily phosphorus‐doped photoepitaxial layer with a carrier concentration above 1×1017 cm−3 grown on the p− substrate shows very high density surface pits due to phosphorus precipitation, suggesting poor crystal quality. Unexpectedly, when this n+ photoepitaxial layer is continuously grown on a heavily boron‐doped p+ photoepitaxial layer at a boron concentration above 1×1019 cm−3, surface pits completely disappear and crystal quality is greatly improved. The very low growth temperature enabled an extremely abrupt impurity profile to be achieved for the p+‐n+ layer.Keywords
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