Field Effect Transistors for Charge Amplifiers

1 January 1973

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 20 (1) , 182-189
https://doi.org/10.1109/tns.1973.4326904

Abstract

In this paper the significance of various noise sources in field-effect transistors is discussed. The intrinsic thermal noise of the conducting channel can be reduced by reducing the channel length. A lower limit to the channel length is set by the carrier velocity saturation effects, which are the hot carrier channel noise and the gate leakage current due to impact ionization. Devices with a ratio of the transconductance to the input capacitance of 3 x 109 sec-1 have been made, and a further improvement appears to be possible.

Keywords

This publication has 11 references indexed in Scilit:

Trapezoidal filtering of signals from large germanium detectors at high rates
Nuclear Instruments and Methods, 1972
Manufacturing Process for Ceramic Encapsulated Junction Field Effect Transistors (JFETs) and Statistical Evaluation of JFET Header Dielectric Materials
IEEE Transactions on Nuclear Science, 1972
Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies
IEEE Transactions on Electron Devices, 1971
Comments on hot carrier noise in field-effect transistors
IEEE Transactions on Electron Devices, 1971
Performance of a pulsed-light feedback preamplifier for semiconductor detector X-ray spectrometers
Nuclear Instruments and Methods, 1970
Dynamic Performance of Schottky-barrier Field-effect Transistors
IBM Journal of Research and Development, 1970
The gate currents of junction field-effect transistors at low temperatures
Proceedings of the IEEE, 1969
Basic limits on the properties of field-effect transistors
Solid-State Electronics, 1963
Thermal Noise in Field-Effect Transistors
Proceedings of the IRE, 1962
A Unipolar "Field-Effect" Transistor
Proceedings of the IRE, 1952