Structure determination of the:Si(111) interface by x-ray standing-wave analysis
- 15 September 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (9) , 4769-4773
- https://doi.org/10.1103/physrevb.36.4769
Abstract
The atomic structure at the interface of films on Si(111) has been investigated with x-ray standing waves. The Co atoms at the interface are five-fold-coordinated. The bonds across the interface are dilated by 0.05±0.03 Å. For the range of film thicknesses studied (9–28 Å), the lattice was measured to be almost free of strain in the direction perpendicular to the interface plane.
Keywords
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