Modelling considerations and development of upper limits of stress conditions for dielectric breakdown projections
- 1 July 1996
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 36 (7) , 1019-1031
- https://doi.org/10.1016/0026-2714(95)00218-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Reliability of thin SiO2Semiconductor Science and Technology, 1994
- Statistical modelling of time dependent oxide breakdown distributionsMicroelectronics Reliability, 1993
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993