Reliability of thin SiO2
- 2 May 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (5) , 989-1004
- https://doi.org/10.1088/0268-1242/9/5/002
Abstract
This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.Keywords
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