Room temperature green electroluminescent diodes prepared from n-type vapour grown epitaxial gallium phosphide
- 30 June 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (6) , 485-491
- https://doi.org/10.1016/0038-1101(69)90078-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Efficient Green Electroluminescence from GaP p-n Junctions Grown by Liquid-Phase EpitaxyJournal of Applied Physics, 1968
- Electroluminescence from Ge-Doped GaP p—n JunctionsJournal of Applied Physics, 1968
- Green Electroluminescence from Gallium Phosphide Diodes near Room TemperatureJournal of Applied Physics, 1967
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965