FM noise of high−efficiency GaAs IMPATT oscillators and amplifiers
- 1 March 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (5) , 245-248
- https://doi.org/10.1063/1.88137
Abstract
It is found experimentally that the FM noise deviation and noise measure of high−efficiency Read−type GaAs oscillators improve with increasing output power, in contrast with the behavior of conventional (flat doping profile) devices of similar technology. It is suggested that this novel potentially attractive feature may be due to tunnel carrier generation in the Read−type device.Keywords
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