Compensation mechanism of undoped GaAs films grown by molecular beam epitaxy using an As-valved cracker cell
- 1 June 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 130-132, 409-413
- https://doi.org/10.1016/s0169-4332(98)00092-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Performance of a valved arsenic cracker source for MBE growthJournal of Crystal Growth, 1993
- Substrate temperature dependence of SQW alloy and superlattice lasers grown by MBE using As2Journal of Crystal Growth, 1991
- Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1Applied Physics Letters, 1991
- Evaluation of a new high capacity, all-tantalum molecular-beam-epitaxy arsenic cracker furnaceJournal of Vacuum Science & Technology B, 1990
- Dimer arsenic source using a high efficiency catalytic cracking oven for molecular beam epitaxyApplied Physics Letters, 1987
- Molecular beam epitaxy of In0.53Ga0.47As and InP on InP by using cracker cells and gas cellsJournal of Vacuum Science & Technology B, 1985
- Effect of arsenic species (As2 OR As4) on the crystallograpffic and electronic structure of mbe-grown GaAs(001) reconstructed surfacesSurface Science, 1983
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977