Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1
- 4 February 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (5) , 478-480
- https://doi.org/10.1063/1.104613
Abstract
The effect of varying the temperature (Tcr) of an As4→As2 cracker furnace between 600 and 700 °C on the properties of GaAs grown by molecular beam epitaxy has been evaluated using 4–300 K Hall measurements and 4.2 K far‐infrared photoconduction spectroscopy, in an extension of earlier work on high‐mobility material (Ref. 1). The residual donors are silicon and sulphur with mid‐1013 cm−3 concentrations under As2‐growth conditions (Tcr=700 °C). By lowering Tcr, the silicon concentration is reduced substantially, leaving sulphur as the principal impurity. A 15‐μm‐thick layer grown with Tcr=650 °C has measured free‐electron densities of ≊2.8×1013 cm−3 and peak mobilities ≊4×105 cm2 V−1 s−1 at ≊28–42 K, the highest ever recorded in bulk GaAs.Keywords
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