Local disorder and optical properties in V-shaped quantum wires: Toward one-dimensional exciton systems
- 30 July 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 68 (4) , 045319
- https://doi.org/10.1103/physrevb.68.045319
Abstract
The exciton localization is studied in GaAs/GaAlAs V-shaped quantum wires (QWR’s) by high spatial resolution spectroscopy. Scanning optical imaging of different generations of samples shows that the localization length has been enhanced as the growth techniques were improved. In the best samples, excitons are delocalized in islands of length of the order of and form a continuum of one-dimensional states in each of them, as evidenced by the dependence of the radiative lifetime. On the opposite, in the previous generation of QWR’s, the localization length is typically 50 nm and the QWR behaves as a collection of quantum boxes. These localization properties are compared to structural properties and related to the progresses of the growth techniques. The presence of residual disorder is evidenced in the best samples and explained by the separation of electrons and holes due to the large built-in piezoelectric field present in the structure.
Keywords
All Related Versions
This publication has 23 references indexed in Scilit:
- Mott transition from a diluted exciton gas to a dense electron-hole plasma in a single V-shaped quantum wirePhysical Review B, 2003
- Modification of optical properties by strain-induced piezoelectric effects in ultrahigh-quality V-groove AlGaAs/GaAs single quantum wireApplied Physics Letters, 2002
- Near-field imaging of one-dimensional excitons delocalized over mesoscopic distancesPhysical Review B, 2001
- Near-field optical spectroscopy of localized and delocalized excitons in a single GaAs quantum wirePhysical Review B, 2001
- Swelling effects in lithium fluoride induced by swift heavy ionsPhysical Review B, 2000
- Improved heterointerface quality of V-shaped AlGaAs/GaAs quantum wires characterized by atomic force microscopy and micro-photoluminescenceJournal of Crystal Growth, 2000
- Effect of disorder on the temperature dependence of radiative lifetimes in V-groove quantum wiresPhysical Review B, 1999
- Self-limiting effects of flow rate modulation epitaxy of GaAs on patterned substrateJournal of Crystal Growth, 1998
- Quantum-size effects on radiative lifetimes and relaxation of excitons in semiconductor nanostructuresPhysical Review B, 1998
- Low-temperature exciton trapping on interface defects in semiconductor quantum wellsPhysical Review B, 1984