Evaluation of Surface States at Si–SiO2 Interface from the Characteristics of P-Type MOS Diodes
- 1 August 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (8)
- https://doi.org/10.1143/jjap.4.613
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Evaluation of Surface State at Oxidized Silicon from the Characteristics of Surface Varactor DiodeJapanese Journal of Applied Physics, 1965
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Semiconductor Surface VaractorBell System Technical Journal, 1962