Effect of target oxidation on reactive sputtering rates of titanium in argon-oxygen plasmas
- 1 November 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 38 (3) , 271-280
- https://doi.org/10.1016/0040-6090(76)90006-7
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Oxidation of lead films by rf sputter etching in an oxygen plasmaJournal of Applied Physics, 1974
- Reactive sputtering of metals in oxidizing atmospheresThin Solid Films, 1973
- A spectroscopic investigation of the reactive sputtering of aluminiumThin Solid Films, 1971
- Plasma Anodization of Metals and SemiconductorsJournal of Vacuum Science and Technology, 1970
- The mechanism of reactive sputteringJournal of Materials Science, 1968
- Physics of Preparation of Josephson BarriersJournal of Applied Physics, 1968
- Reactively sputtered titanium resistors, capacitors and rectifiers for microcircuitsMicroelectronics Reliability, 1967
- Electron energy distributions in plasmas IV. Oxygen and nitrogenProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1961
- Negative Oxygen Ions from a Glow Discharge SourceProceedings of the Physical Society, 1961
- Optical Properties and Oxidation of Evaporated Titanium Films*Journal of the Optical Society of America, 1957