Reduced Pressure MOCVD of C-Axis Oriented BiSrCaCuO Thin Films

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Abstract
BiSrCaCuO thin films were deposited on MgO(100) single crystal substrates by metalorganic chemical vapor deposition at 500°C and 2 Torr using fluorinated β-diketonate complexes of Sr, Ca and Cu and triphenylbismuth. An inverted vertical reaction chamber allowed uniform film growth over large areas (7.7 cm diameter). The as-deposited films were amorphous mixtures of oxides and fluorides and a two step anealing protocol (750°C+850–870°C) was developed which gives c-axis oriented films of Bi2Sr2Ca1Cu2O x . The post-annealed films showed onsets in the resistive transition of 110 K and zero resistivity was achieved by 83 K. Critical current densities as high as 1.1×104 A/cm2 were obtained at 25 K.