The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method

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Abstract
Distributions were mapped of lattice inclination and lattice spacing in (001) undoped GaAs crystals using synchrotron plane wave X-ray topography. For a high dislocation density GaAs wafer, degree of lattice inclination is larger (Δθ≃±40 seconds) than that for a low dislocation density wafer (±5 seconds), whereas the variation of lattice spacing is of nearly the same order (Δd/d≃±1×10-5). Lattice spacing is small near the wafer center and large around the periphery for both the high and low dislocation density wafers.