Characterization of structural features in thin layers of GaAs, Al(x)Ga(1-x)As and AlAs by means of structure factor imaging and high resolution electron microscopy
- 31 December 1985
- journal article
- Published by Elsevier in Spectrochimica Acta Part B: Atomic Spectroscopy
- Vol. 40 (5-6) , 835-845
- https://doi.org/10.1016/0584-8547(85)80136-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- EpitaxyReports on Progress in Physics, 1982
- The mechanisms of etch pit and ripple structure formation on ion bombarded Si and other amorphous solidsNuclear Instruments and Methods, 1980
- Transmission electron microscopy of interfaces in III–V compound semiconductorsJournal of Vacuum Science and Technology, 1977