Point Defect Evolution During Rapid Thermal Annealing of Si+-Implanted GaAs.
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The point defect reactions in GaAs by which ion implant damage is removed and implanted dopants are activated remain poorly understood. Deep level capacitance transient spectroscopy (DLTS) has been used to study the effects of rapid thermal annealing (RTA) on Si-implant damage generated defects. In low implant dose samples, the results of RTA are similar to those of furnace anneals and also agree well with previous reports of boron-implanted and neutron-irradiated material. In contrast to this, higher dose samples showed much smaller than expected apparent defect concentrations. After RTA, very broad DLTS spectra and relatively little EL2 or EL3 defect formation was observed. The significance of these results with regard to the mechanisms of dopant activation and damage removal are discussed.Keywords
This publication has 14 references indexed in Scilit:
- Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity techniqueApplied Physics Letters, 1986
- Optical behavior of the U band in relation to EL2 and EL6 levels in boron-implanted GaAsApplied Physics Letters, 1986
- AsGaantisites and their relation to EL2 defects in GaAsJournal of Physics C: Solid State Physics, 1985
- Transient Thermal Processing of GaAsMRS Proceedings, 1985
- Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAsJournal of Applied Physics, 1984
- Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materialsJournal of Applied Physics, 1984
- The role of defects in the diffusion and activation of impurities in ion implanted semiconductorsJournal of Electronic Materials, 1984
- Compensation mechanisms related to boron implantation in GaAsJournal of Applied Physics, 1982
- Ion implantation in III–V compoundsRadiation Effects, 1980
- TEM structural studies on Se+implanted GaAsRadiation Effects, 1979