A generalized Poisson based model for defect spatial distribution in WSI
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Discusses the use of the modified generalized Poisson binomial limit in modeling defect spatial distribution in WSI (wafer scale integration) and large-area VLSI chips. This model demonstrates the usefulness of generalized Poisson distributions for effectively taking into account the issues of the distribution of clusters and cluster sizes. The strength of the proposed model lies in its simplicity and its close adherence to the forms of defect patterns on a wafer. The model shows excellent fits to the data from simulated wafer maps with high clustering of defects. It also exhibits good fits to data from wafers with small-area, highly dispersed clusters.<>Keywords
This publication has 13 references indexed in Scilit:
- A high-level WSI yield simulation systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- The use and evaluation of yield models in integrated circuit manufacturingIEEE Transactions on Semiconductor Manufacturing, 1990
- Modeling defect spatial distributionIEEE Transactions on Computers, 1989
- Small-area fault clusters and fault tolerance in VLSI circuitsIBM Journal of Research and Development, 1989
- Simulation of spatial fault distributions for integrated circuit yield estimationsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- The effects of wafer to wafer defect density variations on integrated circuit defect and fault distributionsIBM Journal of Research and Development, 1985
- Integrated circuit yield statisticsProceedings of the IEEE, 1983
- Cost-size optima of monolithic integrated circuitsProceedings of the IEEE, 1964
- STUDIES IN STATISTICAL ECOLOGYBiometrika, 1952
- A Generalization of Poisson's Binomial Limit For use in EcologyBiometrika, 1949