34.4: Invited Paper: Microcrystalline Silicon: An emerging Material for Stable Thin Film Transistors

This publication has 9 references indexed in Scilit:

• Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties
  Journal of Applied Physics, 2003
• Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics
  Current Opinion in Solid State and Materials Science, 2002
• Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C
  Applied Physics Letters, 2002
• Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor
  Journal of Non-Crystalline Solids, 2002
• Polycrystalline Silicon Thin-Film Transistors
  Solid State Phenomena, 2001
• Low-Temperature Plasma-Processed Microcrystalline Silicon Thin Films for Large-Area Electronics
  Solid State Phenomena, 2001
• Dangling-bond defect state creation in microcrystalline silicon thin-film transistors
  Applied Physics Letters, 2000
• Ethics and computer use
  Communications of the ACM, 1995
• Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment
  Physical Review B, 1995