Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C
- 21 January 2002
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (3) , 440-442
- https://doi.org/10.1063/1.1435798
Abstract
Field-effect structures were made from nanocrystalline silicon (nc-Si:H) deposited at a substrate temperature of 150 °C by plasma-enhanced chemical vapor deposition excited at 80 MHz. The nc-Si:H channel layer was grown on top of a separate nc-Si:H buffer and seed layer that serves to develop the crystalline structure. Staggering the contacts and the gate ensures that mobilities are measured precisely in the last-to-grow nc-Si:H layer. The hole mobility in saturation reaches 0.06–0.2 cm2 V−1 s−1 and the electron mobility ∼12 cm2 V−1 s−1. These results suggest that large-area circuits of complementary p- and n-channel devices can be made from nc-Si:H deposited on low-temperature substrates.Keywords
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