Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor
- 17 January 2002
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 299-302, 113-117
- https://doi.org/10.1016/s0022-3093(01)01187-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Low-Temperature Plasma-Processed Microcrystalline Silicon Thin Films for Large-Area ElectronicsSolid State Phenomena, 2001
- Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surfaceJournal of Applied Physics, 2001
- Transport mechanisms in hydrogenated microcrystalline siliconThin Solid Films, 2001
- Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin filmsJournal of Applied Physics, 2000
- Microcrystalline silicon with high electron field-effect mobility deposited at 230°CJournal of Non-Crystalline Solids, 2000
- The role of hydrogen in the formation of microcrystalline siliconMaterials Science and Engineering: B, 2000
- Microcrystalline silicon growth on a-Si:H: effects of hydrogenThin Solid Films, 1999
- Time resolved microwave conductivity measurements for the characterization of transport properties in thin film micro-crystalline siliconThin Solid Films, 1997
- In situ measurements of changes in the structure and in the excess charge-carrier kinetics at the silicon surface during hydrogen and helium plasma exposureJournal of Applied Physics, 1995
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935