Microcrystalline silicon with high electron field-effect mobility deposited at 230°C
- 1 May 2000
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 266-269, 1260-1264
- https://doi.org/10.1016/s0022-3093(99)00934-5
Abstract
No abstract availableKeywords
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