A Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors, TFTS
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The drive-current of low-temperature (∼300°C) deposited TFTs has been increased by replacing the a-Si:H channel, and source and drain materials with μc-Si. Lightly B2H6 doped, near-intrinsic μc-Si has been used as the channel layer of the TFTs, and n+ μc-Si was used for the source and drain contacts. The compensation of intrinsic defects in the undoped μc-Si by boron doping increases the dark conductivity activation energy from -0.35 eV to 0.8 eV. TFTs were fabricated in a bottom gate structure, and required an H2 plasma treatment to produce devices with effective channel mobilities of -6.8 cm2/V-s and threshold voltages of -3.7 V in the saturation region.Keywords
This publication has 7 references indexed in Scilit:
- Intrinsic microcrystalline silicon deposited by remote PECVD: a new thin-film photovoltaic materialPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Fabrication and performance of thin film transistors, TFTs, incorporating doped μc-Si source and drain contacts, and boron-compensated μc-Si channel layersJournal of Non-Crystalline Solids, 1993
- Improved Electrical Performance of a-Si:H Thin Film Transistors, TFTs with n+ (μc-Si Contact, and Silicon Oxide and Nitride Dual-Layer DielectricsMRS Proceedings, 1993
- Channel Layer Surface Modifications in a-Si:II thin Film Transistors With Oxide/Nitride Dielectric LayersMRS Proceedings, 1992
- Chemistry and Solid State Physics of Microcrystalline SiliconMRS Proceedings, 1989
- Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline siliconPhysical Review B, 1987
- Quelques résultats théoriques sur l'étude par R.M.N. des fluides polyatomiques plansJournal de Physique Lettres, 1981