Influence of parameter distribution on simultaneous switching noise (SSN) for CMOS output drivers
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Modeling of Simultaneous Switching Noise (SSN) has previously been done considering single-point parameters. This paper deals with the effects of parameter distributions on SSN. Parameters investigated include threshold voltage, drive strength, signal arrival times, power supply and temperature Author(s) Vaidyanath, A. Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA Prince, J.L.Keywords
This publication has 7 references indexed in Scilit:
- Effect of CMOS driver loading conditions on simultaneous switching noiseIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B, 1994
- Prediction of product yield distributions from wafer parametric measurements of CMOS circuitsIEEE Transactions on Semiconductor Manufacturing, 1992
- Noise immunity characteristics of CMOS receivers and effects of skewing/damping CMOS output driver switching waveform on the ‘simultaneous’ switching noiseMicroelectronics Journal, 1992
- Simultaneous switching ground noise calculation for packaged CMOS devicesIEEE Journal of Solid-State Circuits, 1991
- Delta-I noise specification for a high-performance computing machineProceedings of the IEEE, 1985
- Computing Inductive Noise of Chip PackagesAT&T Bell Laboratories Technical Journal, 1984
- Electrical Design of a High Speed Computer PackageIBM Journal of Research and Development, 1982