Exploratory study of the polycrystalline n-silicon photoelectrode by the scanning laser spot technique
- 30 June 1985
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 12 (2) , 157-167
- https://doi.org/10.1016/0165-1633(85)90031-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- 7.2% efficient polycrystalline silicon photoelectrodeApplied Physics Letters, 1984
- Localized Photoelectrochemical Measurements of Passive Films on TitaniumJournal of the Electrochemical Society, 1983
- Chemically induced interface states in photoelectrochemical cellsApplied Physics Letters, 1983
- Local Spectral Responses of Transition Metal Dichalcogenides in Photoelectrochemical CellsJournal of the Electrochemical Society, 1982
- Chemical, compositional, and electrical properties of semiconductor grain boundariesJournal of Vacuum Science and Technology, 1982
- Scanning light-spot analysis of the carrier collection in liquid-junction solar energy convertersJournal of Applied Physics, 1980
- Anodic Etching of Defects in P‐Type SiliconJournal of the Electrochemical Society, 1980
- Anodic etching of p-type silicon as a method for discriminating electrically active and inactive defectsApplied Physics Letters, 1980
- Detection of latent scratches and swirl on silicon wafers by scanned surface photoresponseJournal of Applied Physics, 1980
- Dual reference electrode for electrochemical pulse studiesAnalytical Chemistry, 1968