Grain-Boundary Resistance in Polycrystalline Metals
- 12 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (19) , 2100-2103
- https://doi.org/10.1103/physrevlett.56.2100
Abstract
Grain boundaries are known to reduce significantly the electrical dc conductivity of polycrystalline metallic materials. In this paper, we give a quantum mechanical calculation of the grain-boundary resistance based on the transfer-matrix approach. The results show an exponential decrease of the conductivity with respect to the number of grain boundaries per mean free path in accord with an empirical model proposed recently.Keywords
This publication has 18 references indexed in Scilit:
- Mean free path and effective density of conduction electrons in polycrystalline metal filmsThin Solid Films, 1984
- Localization in thin copper filmsPhysical Review B, 1983
- Reduced density of effective electrons in metal filmsThin Solid Films, 1982
- Localization in the metallic regime of granular Cu—SiO2 filmsSolid State Communications, 1982
- Exactly solvable localisation modelJournal of Physics C: Solid State Physics, 1981
- Critical assessment of thickness-dependent conductivity of thin metal filmsThin Solid Films, 1981
- Mean free path and density of conductance electrons in platinum determined by the size effect in extremely thin filmsPhysical Review B, 1980
- Transition to Localization in Granular Aluminum FilmsPhysical Review Letters, 1980
- Possible Role of Incipient Anderson Localization in the Resistivities of Highly Disordered MetalsPhysical Review Letters, 1980
- Structural and electrical properties of granular metal filmsAdvances in Physics, 1975