Electrical properties of infrared photovoltaic CdxHg1−xTe detectors
- 1 November 1981
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 21 (6) , 323-332
- https://doi.org/10.1016/0020-0891(81)90038-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Internal photo-effects in graded-gap semiconductors—I. Excess-carrier distributions∗Infrared Physics, 1980
- Application of epitaxial graded-gap semiconductor layers as broad range photodetectorsThin Solid Films, 1978
- Optimization of graded band gap CdHgTe solar cellsRevue de Physique Appliquée, 1978
- Electrical transport properties of epitaxial graded-GaP CdxHg1—xTe layersPhysica Status Solidi (a), 1977
- Electrical and photoelectric properties of graded-gap epitaxial CdxHg1−xTe layersThin Solid Films, 1977
- Energy level diagram of high-efficiency CdxHg1−xTe Photo-DiodesInfrared Physics, 1977
- Epitaxial CdxHg1−xTe photovoltaic detectorsInfrared Physics, 1976
- Conductivity and Hall Coefficient of Graded-Composition Epitaxial CdxHg1−xTe LayersPhysica Status Solidi (a), 1975
- Some properties of photovoltaic CdxHg1−xTe detectors for infrared radiationInfrared Physics, 1975