Diffusion of B and As from polycrystalline silicon during rapid optical annealing
- 1 October 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (7) , 2784-2788
- https://doi.org/10.1063/1.339407
Abstract
The diffusion of B and As from polycrystalline Si into single-crystal Si during rapid optical annealing (ROA) has been investigated. Samples were characterized by secondary ion mass spectrometry, transmission electron microscopy, and sheet resistance measurements. It is demonstrated that very shallow diffusion profiles in the single-crystal Si can be formed by ROA. At 1050 °C/5 s, for instance, a junction depth of ∼35 nm is obtained for As diffusion. The effect of polycrystalline Si/mono-Si interface treatment on the dopant diffusion and the polycrystalline Si grain structure will be discussed.This publication has 7 references indexed in Scilit:
- Advantages of rapid optical annealingCanadian Journal of Physics, 1985
- Properties of Ion‐Implanted Polycrystalline Si Layers Subjected to Rapid Thermal AnnealingJournal of the Electrochemical Society, 1985
- Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal AnnealingJapanese Journal of Applied Physics, 1985
- Grain growth during transient annealing of As-implanted polycrystalline silicon filmsApplied Physics Letters, 1984
- Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited filmsJournal of Applied Physics, 1984
- Thermal stability of electrically active dopants in laser annealed silicon filmsJournal of Applied Physics, 1983
- Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser AnnealingJapanese Journal of Applied Physics, 1982