Electronic properties of (211) surfaces of group-IV and III-V semiconductors
- 15 August 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (4) , 2084-2089
- https://doi.org/10.1103/physrevb.30.2084
Abstract
The (211) surfaces of diamond- and zinc-blende-structure crystals are of particular importance for molecular beam epitaxy of heteropolar semiconductors on homopolar substrates, as well as for the study of double dangling-bond steps [(2?1?1) step] on (111) surfaces. We present the first calculations of electronic properties of these surfaces. We discuss surface band structures and densities of states for Si(211), GaAs(211), and GaAs (?2?1?1). A comparison of our results with the corresponding (100) and (111) surface properties shows that localized surface features are transferable from low-index to higher-index faces.Keywords
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