An alternative method for the dechannelling correction in channelling-backscattering experiments
- 1 January 1981
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 58 (5) , 151-156
- https://doi.org/10.1080/01422448108229079
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Small-angle multiple scattering of ions in the screened Coulomb region: I. Angular distributionsPublished by Elsevier ,2002
- Disorder production and amorphisation in ion implanted siliconRadiation Effects, 1980
- Dechannelling of MeV He ions by twinned regions in implanted Si crystalsPhilosophical Magazine A, 1978
- A semiempirical method of applying the dechanneling correction in the extraction of disorder distributionRadiation Effects, 1977
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Plural and multiple scattering of low‐energy heavy particles in solidsPhysica Status Solidi (b), 1971
- Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single CrystalsJournal of Applied Physics, 1970
- Analysis of disorder distributions in boron implanted siliconRadiation Effects, 1970
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Zur Einfach- und Mehrfachstreuung geladener TeilchenZeitschrift für Naturforschung A, 1960