Electron-doped infinite-layer thin films with TC over 40 K grown on DyScO3 substrates

Abstract
We report high-quality electron-doped infinite-layer superconducting thin films with a TC of over 40 K grown on lattice-matched DyScO3 substrates by molecular-beam epitaxy. The optimally doped film seems to be free from strain, thus leading to a low resistivity of 75 μΩ cm at room temperature and 15 μΩ cm just above TC.