Tantalum Oxide Films Prepared by Oxygen Plasma Anodization and Reactive Sputtering
- 2 June 1967
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 50 (6) , 283-287
- https://doi.org/10.1111/j.1151-2916.1967.tb15110.x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A NEW STRUCTURE IN TANTALUM THIN FILMSApplied Physics Letters, 1965
- Determination of the Density and Dielectric Constant of Thin Ta[sub 2]O[sub 5] FilmsJournal of the Electrochemical Society, 1965
- Deposition of Tantalum Films with an Open-Ended Vacuum SystemBell System Technical Journal, 1964
- The Formation of Metal Oxide Films Using Gaseous and Solid ElectrolytesJournal of the Electrochemical Society, 1963
- Sputtering of Dielectrics by High-Frequency FieldsJournal of Applied Physics, 1962
- Thin-film capacitors using tantalum oxide dielectrics prepared by reactive sputteringSolid-State Electronics, 1961
- Tantalum Printed CapacitorsProceedings of the IRE, 1959