Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon
- 1 February 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 124 (1) , 35-41
- https://doi.org/10.1016/0040-6090(85)90025-2
Abstract
No abstract availableKeywords
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