Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon
- 1 October 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 85 (1) , 7-14
- https://doi.org/10.1016/0040-6090(81)90049-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Si(L V V) Auger spectra of amorphous Si-oxide, Si-nitride, and Si-oxinitrideJournal of Applied Physics, 1980
- Core and valence electron excitations of amorphous silicon oxide and silicon nitride studied by low energy electron loss spectroscopyThin Solid Films, 1979
- Oxide formation on the silicon (111) surface studied by Auger electron spectroscopy and by low energy electron loss spectroscopyThin Solid Films, 1979
- Formation of thin Si3N4 films by nitrogen ion implantation into siliconThin Solid Films, 1979
- Thermally grown silicon nitride films for high-performance MNS devicesApplied Physics Letters, 1978
- Chemical shifts in auger electron spectra from silicon in silicon nitrideSurface Science, 1976
- Quantitative Auger electron spectroscopy using elemental sensitivity factorsJournal of Vacuum Science and Technology, 1976
- Formation of SiC and Si3N4in silicon by ion implantationRadiation Effects, 1976
- The Detection of Silicon-Oxynitride Layers on the Surfaces of Silicon-Nitride Films by Auger Electron EmissionJournal of the Electrochemical Society, 1972