Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon
- 27 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (9) , 908-910
- https://doi.org/10.1063/1.103401
Abstract
Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.Keywords
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