Influence of acoustic phonons on inter-subband scattering in GaAs-GaAlAs heterojunctions

Abstract
Shubnikov-deHaas measurements on GaAs-GaAlAs heterojunctions with two occupied subbands are presented, which show that at intermediate temperatures, 1<T<4 K, the oscillations resulting from different subbands can be multiplicative, as opposed to the simple addition which occurs below 1 K. This behaviour is attributed to acoustic phonon mediated inter-subband scattering.
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