The Effect of Polysilicon Doping (Using Ion Implantation or PBr3 Diffusion or Insitu Doping) on TiSi2 Formation
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dopant redistribution during titanium silicide formationJournal of Applied Physics, 1986
- Titanium silicide formation on BF+2-implanted siliconApplied Physics Letters, 1985
- Growth of titanium silicide on ion-implanted siliconJournal of Applied Physics, 1983
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980