Reduction of the surface recombination current in InGaAs/InP pseudo-heterojunction bipolar transistors using a thin InP passivation layer
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (12) , 585-587
- https://doi.org/10.1109/55.43148
Abstract
In an InGaAs/InP pseudo-heterojunction bipolar transistor (PHBT) with InP passivation, regions from the emitter mesa edge to the base contact are protected by a thin InP barrier layer. By using such a passivation, the surface recombination current is effectively suppressed. The DC current gain obtained for such a PHBT is as high as 455, compared to a maximum value of 240 for a normally passivated PHBT. The current gain is also found to be independent of the perimeter-to-area ratio of the emitter mesa as a result of the passivation.Keywords
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