High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors
- 1 September 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (9A) , L1195
- https://doi.org/10.1143/jjap.33.l1195
Abstract
In this paper, we report the double boron δ-doped Si metal semiconductor field-effect transistors (MESFETs) grown by molecular beam epitaxy (MBE). It is found that when a double boron δ-doped layer has been used as a conducting channel, the devices exhibit the excellent property of not only higher drain-to-source saturation current (I DSS) but also enhancement in extrinsic transconductance. MESFETs with a variety of boron doses of δ-doped layers have been fabricated and studied. The measured transconductance is enhanced two to five times over that of the single δ case.Keywords
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